For the first time, an epitaxial Pt(001) thin film has been grown successfully on a Si(001) substrate using an epitaxial γ-Al 2 O 3 (001) buffer layer. The epitaxial γ-Al 2 O 3 (001) buffer layers on Si substrates were prepared by chemical vapor deposition using trimethyl aluminum and O 2 gas. The epitaxial Pt(001) films were deposited on the epitaxial Al 2 O 3 (001) layer using RF sputtering at a low deposition rate (~0.7nm/min), at a substrate temperature of 600 o C. This could enable the deposition of (001) oriented ferroelectric films on the Pt(001).