Fe x Si 1− x -diluted magnetic semiconductor films with thickness 40nm but different Fe concentrations of 4% and 7% were grown on Si(100) substrates at 200 or 250°C by molecular beam epitaxy. Cross-sectional transmission electron microscopy observation confirms the epitaxial growth of the Fe x Si 1− x films on Si substrate, and no Fe-related clusters are found in the films. Uniform distributions of Fe are observed along the growth direction in the films, showing no significant surface segregation of Fe atoms during the growth of the films. Measurements of the Hall effect at room temperature show that the carrier type is hole in the films. Anomalous Hall effect is observed at 26K, suggesting that ferromagnetic ordering may exist in the films below 26K.