Sulphur-doped GaSb epitaxial layers are grown on GaSb and GaAs substrates by atmospheric pressure MOVPE. Trimethylgallium and trimethylantimony are used as the Ga and Sb sources, respectively. Hydrogen sulphide (1% H2S diluted in hydrogen) is employed as the sulphur source. The mole fraction of H 2 S in the reactor ranging from 6.1 × 10 −6 to 1.2×10 −4 results in the hole concentrations from 2.8×10 17 to 2.5×10 18 cm −3 , respectively. Low temperature (T = 5 K) photoluminescence measurements show a sulphur-related transition S 1 near 732 meV indicating that sulphur is successfully incorporated into GaSb. The PL spectra of the samples grown with a H 2 S mole fraction larger than 6.2 × 10 −5 consist only of a native acceptor transition A and a sulphur-related transition S 1 The position of S 1 transition is independent of the H 2 S mole fraction. The ratio of the intensity of the sulphur-related transition S 1 to the that of the transition A increases from 0 up to 1.5 with increasing H 2 S mole fraction.