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We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When...
The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different...
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