Resonant phonons, sometimes also called leaky waves, are phonons associated with a crystal defect, a surface, an adsorbed layer and whose frequencies fall inside the bulk crystal band. Such resonant phonons were studied experimentally and theoretically before for clean surfaces and for adsorbed monolayers. We present here a study of resonant phonons associated with the adsorption of a slab of L monolayers on a substrate. With the help of a simple atomic model, we obtained a closed form expression giving the variation of the transverse phonon density of states associated with the adsorption of the slab. An application which qualitatively simulates the adsorption of L monolayers of Ge on Si shows the existence of well-defined resonant phonons within the bulk acoustic band of the substrate.