X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si_{1-x}Ge_{x}, (ii) selected binary REVO_4 oxides and (iii) selected ternary ABCO_4 oxides. The effect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si_{1-x}Ge_{x}, solid solutions Ca_{x}Sr_{1-x}NdAlO_4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell (SrLaGaO_4), and variously developed block structure (in selected binary REVO_4 crystals).