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Maskless pendeo-epitaxy (PE) involves the lateral and, commonly, the vertical growth of cantilevered “wings” of material from the side-walls of unmasked etched forms. Cross-sectional SEM micrographs revealed that films grown at 1020 C exhibited similar vertical [0001] and lateral [1120] growth rates. Increasing the temperature increased the latter due to the higher thermal stability of the GaN(1120)...
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