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The electrical properties of the interface between Hg₁₋xCdxTe (x = 0.22 and x = 0.32-0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg₁₋xCxTe have been developed. The fixed charge states density,...
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