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We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the...
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