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The paper presents the design and hardware implementation of a computer controlled system composed of up to four high-power microwave sources. Each source provides up to 200 W of continuous wave power. Frequency of each source is stabilized within ±0.5 ppm of the nominal frequency adjustable within 2.35÷2.6 GHz range. All four sources can be synchronized to the same frequency with computer-controlled...
In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor...
Non-Orthogonal Multiple Access (NOMA) with Successive Interference Cancellation (SIC) is one of the promising techniques proposed for 5G systems. It allows multiple users with different channel coefficients to share the same (time/frequency) resources by allocating several levels of (power/code) to them. In this article, a design of a cooperative scheme for the uplink NOMA Wi-Fi transmission (according...
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical...
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