International Journal of Microelectronics and Computer Science > 2017 > Vol. 8, nr 2 > 72--79
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journal ISSN : | 2080-8755 |
journal e-ISSN : | 2353-9607 |
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Bibliography
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[1] J. Bruner, ”Intel 22nm 3-D Tri-Gate Transistor Technology”, News release and press materials (Intel), http://www.intel.com, 2011.
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[2] Q. Liu, et al., ”High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond”, IEDM, Washington DC, USA, 2013.
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[3] J. M. Larson, J. P. Snyder, ”Overview and status of metal S/D Schottkybarrier MOSFET technology”, IEEE Transaction Electron Devices 53 (5), 1048–1058, 2006.