Elektronika : konstrukcje, technologie, zastosowania > 2010 > Vol. 51, nr 2 > 23-27
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journal ISSN : | 0033-2089 |
journal e-ISSN : | 2449-9528 |
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Bibliography
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[1] Friedrichs P.: Silicon Carbide Power semiconductors - New opportunities for high efficiency. 3rd IEEE Conf. On Industrial Electronics and Applications ICIEA 2008, 1770-1774.
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[2] Friedrichs P., Mitlenher H., Kaltschmidt R., Weinert U., Bartsch W., Hecht C., Donke K. O., Weis B., Stephani D.: The vertical silicon carbide JFET - a fast and low loss solid state power switching device. 9th European Conference on Power Electronics and Applications Conf. Record, EPE 2001.
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[3] Weis B., Braun M., Friedrichs P.: Turn-off and short-circuit behavior of 4H SiC JFETs. IEEE Industry Applications Conference IAS 2001, vol.1, 365-369.