Elektronika : konstrukcje, technologie, zastosowania > 2012 > Vol. 53, nr 2 > 12-15
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journal ISSN : | 0033-2089 |
journal e-ISSN : | 2449-9528 |
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Bibliography
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[1] Neudeck P. G., Silicon Carbide Technology, in: The VLSI Handbook. 2nd Edition, W-K Chen (Ed.) CRC Press, Inc. Boca Raton, Florida. 2007, pp. 5.1-5.34.
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[2] Lebedev A. A., Deep-level Defects in SiC Materials and Devices, in Silicon Carbide Materials, Processing and Devices, Z. C. Feng, J. H. Zhao (Eds.), Taylor & Francis, New York. London, 2004, s. 128-168.
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[3] Lang D. V., Deep-level transient spectroscopy: A new method to characterize traps in semiconductors, J. Appl. Phys., 45, 1974, pp. 3023-3032.