Prace Instytutu Technologii Elektronowej > 2009 > z. 1/2 > 115-138
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journal ISSN : | 0138-0915 |
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Publications'2008
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[P1] BREIL N., DUBOIS E., HALIMANOUI A., POUYDEBASQUE A., ŁASZCZ A., RATAJCZAK J., LARRIEU G., SKOTNICKI T.: Integration of PtSi in p-Type MOSFETs Using a Sacrifical Low-Temperature Germanidation Process. IEEE Electron Dev. Lett. 2008 vol. 29 no. 2 p. 152-154.
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[P2] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Dependence of Cathodoluminescence on Layer Resistance Applied for Measurement of Thin Layer Sheet-Resistance. J. Microsc. (in press).