Optica Applicata > 2006 > Vol. 36, nr 2-3 > 245-256
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journal ISSN : | 0078-5466 |
journal e-ISSN : | 1899-7015 |
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[1] see, e.g., GRUHLE A., SCHÜPPEN A., Recent advances with SiGe heterojunction bipolar transistors, Thin Solid Films 294(1–2), 1997, pp. 246–9.
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[2] LEE M.L., FITZGERALD E.A., BULSARA M.T., CURRIE M.T., LOCHTEFELD A., Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics 97(1), 2005, pp. 11101/1–27.
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[3] see e.g., VOOK F.L. [Ed.], Radiation Effects in Solids, Plenum, New York 1968.