Journal of Telecommunications and Information Technology > 2010 > nr 1 > 20-24
Source
Abstract
Identifiers
journal ISSN : | 1509-4553 |
journal e-ISSN : | 1899-8852 |
Authors
Keywords
Additional information
Publisher
Fields of science
Bibliography
-
[1] Y. Mitani, H. Satake, Y. Nakasaki, and A. Toriumi, “Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides”, IEEE Trans. Electron Dev., vol. 50, no. 11, pp. 2221–2226, 2003.
-
[2] Y. Nishioka, K. Ohyu, Y. Ohji, N. Natuaki, K. Mukai, and T. P. Ma, “Hot-electron hardened Si-gate MOSFET utilizing F implantation”, IEEE Electron Device Lett., vol. 10, no. 4, pp. 141–143, 1989.
-
[3] P. Wrigh, N. Kasai, S. Inoue, and K. C. Saraswat, “Hot electron immunity of SiO2 dielectrics with fluorine incorporation”, IEEE Electron Dev. Lett., vol. 10, no. 8, pp. 347–348, 1989.