Wiadomości Elektrotechniczne > 2001 > R. LXIX, nr 3 > 106-110
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journal ISSN : | 0043-5112 |
journal e-ISSN : | 2449-9560 |
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Bibliography
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[1] ASANO K. i in.: High Temperature Static and Dynamie Characteristics of 3,7 kV High Voltage 4H-SiC JBS. Proc. of ISPSD'2000. May 2000, Toulouse (France)
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[2] BALIGA B. J.: Trends in Power Semiconductor Devices. IEEE Trans. on Electron Devices 1996 nr 10
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[3] FRIEDRICHS P. i in.: SiC Power Devices with Low on-Resistance for Fast Switching Applications. Proc. of ISPSD'2000. May 2000, Toulouse (France)