Przegląd Elektrotechniczny > 2017 > R. 93, nr 1 > 205--208
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journal ISSN : | 0033-2097 |
journal e-ISSN : | 2449-9544 |
DOI | 10.15199/48.2017.01.50 |
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Bibliography
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[1] Y. Wu, M. Jacob-Mitos, M. L. Moore, and S. Heikman: A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz, IEEE Electron Device Lett, Vol. 29, No. 8, pp. 824-826, Aug. 2008
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[2] J. Yang: Efficiency improvement with GaN-based SSFET as synchronous rectifier in PFC boost converter, in Proc. PCIM Europe, pp. 1-6, May 2014.
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[3] A. Lidow, J. Strydom, M. de Rooij, D. Reusch: GaN Transistors for Efficient Power Conversion, 2nd Edition, Wiley, ISBN: 978-1-118-84476-2, Sept. 2014