Archives of Electrical Engineering > 2020 > Vol. 69, nr 4 > 781--792
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journal ISSN : | 1427-4221 |
journal e-ISSN : | 2300-2506 |
DOI | 10.24425/aee.2020.134629 |
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Bibliography
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[1] Havanur S., Optimum Dead Time Selection in ZVS Topologies, Power Electronic Technology, pp. 22–25 (2012).
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[2] Han D., Sarlioglu B., Understanding the Influence of Dead-time on GaN Based Synchronous Boost Converter, Proceedings of IEEE Workshop on Wide Bandgap Power Devices and Applications, Knoxville, USA, pp. 0–74 (2014).
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[3] Texas Instruments Inc., LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs, Data Sheet, SNVS725F (2013).