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In order to reduce a power consumption of a perpendicular magnetoresistive random access memory, a stress assisted magnetization reversal method in which an in-plane tensile stress changes the magnetic anisotropy of a magnetic material has been proposed. A spin valve structured giant magnetoresistive multilayer of Cu(15 nm)/Terfenol-D(10 nm)/Cu(3 nm)/Tb-Fe-Co(30 nm)/Cu(15 nm) was prepared and its...
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