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New gas-sensitive films of In x O y N z have been fabricated by reactive rf-magnetron sputtering using an In 2 O 3 target and an Ar/N 2 process atmosphere (0-65% N 2 ). The layers have been annealed for 10h at 600 o C in synthetic air. Structural analysis (XRD, TEM, SEM, AES) shows that oxygen atoms are substituted by nitrogen atoms in...
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