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Recently, III-V quantum-well field effect (QWFET) Transistors have emerged as the most potential technology of choice for future Tera-Hz and next generation high-speed, lowvoltage logic applications beyond Si-CMOS technology. In fact, the excellent RF-performance has been demonstrated using InAlAs/InxGa1-xAs HEMTs on InP substrate. This paper presents the fabrication of the nano-scale high performance...
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