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The quest for technologies beyond the 15 nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on alternative channel materials such as Ge and III-V compound semiconductors with inherently higher carrier mobility than those of Si. Intensive effort has been made on GaAs nMOS devices owing to GaAs's superior electron mobility and its lattice parameter close to that...
Germanium has emerged as an exciting alternative material for high-performance scaled CMOS, however not without difficulties. After a review of the state-of-the-art, mainly focusing on two techniques to passivate the channel/dielectric interface, we analyze the strengths (carrier mobility, band gap), and weaknesses (n-type doping, lattice mismatch and BTBT leakage) of Ge for MOSFETs. We also identify...
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