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Polycrystalline silicon (poly-Si) thin film nonvolatile memory (NVM) devices with an oxide–silicon–oxynitride (OSOn) stack structure using an amorphous silicon (a-Si) as a storage layer on a glass panel were fabricated and investigated for high charge storage of memory applications in systems-on-panels (SOPs). Because the band gap of a-Si is lower than that of silicon nitride (SiNx) and a larger band...
This paper presents facile, reproducible soft-lithographic technique for fabricating textured crystalline silicon solar cell with hexagonally close-packed hemispherical arrays using ordered polymeric microspheres. Close-packed monolayers of polymer microspheres were deposited on flat cleaned glass substrate using spin-casting technique. The relief structure of highly ordered microspheres successfully...
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