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Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC IG is explained based on proposed model. Hopping conduction mechanism is responsible for IG at VG < 0. IG at VG > 0 seems to be controlled by thermionic emission and affected by the action of floating-base n(W)-p(p-GaN)-n(AlGaN/GaN) bipolar...
Lateral Schottky Barrier Diodes (SBDs) with reduced on resistances (Ron) and breakdown voltages (Vbd) of higher than 1kV were fabricated on AlGaN/GaN/Si HEMT epi wafers. To improve the forward characteristics of the SBDs, an additional ohmic metal deposition process (2nd ohmic process) has been inserted between the first ohmic metallization process and a Schottky metal deposition process. To minimize...
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