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We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results...
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14...
The development of a 835-900-GHz biasable fundamental balanced mixer using planar GaAs Schottky diodes is presented. The monolithic microwave integrated circuit integrates two planar Schottky anodes in a balanced configuration, stripline filtering elements, and on-chip capacitor on a thin GaAs membrane. At 850 GHz, double side-band (DSB) mixer noise temperature of 2660 K and conversion loss of 9.25...
Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range that can sufficiently pump multi-pixel imaging...
A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process...
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