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In this work, we study the effect of the back biasing on the effective mobility in Ultra-Thin Box Fully Depleted SOI devices. Thanks to the carrier mobility extraction on large N & PMOS transistors, for thin (GO1) and thick gate oxide (GO2), the important role of the surface roughness and effective field in the mobility reduction is highlighted. Moreover, for the first time these electrical results...
In this work, the influence of back biasing on the effective mobility in Ultra Thin film and ultra thin Box Fully Depleted SOI devices is studied. The evolution of the carrier mobility with the effective field on large N & PMOS devices for thin (GO1) and thick gate oxide (GO2) is investigated. The impact of surface roughness scattering at high electric on the effective mobility is also demonstrated...
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