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A method using a pulsed light bias synchronized to the probing monochromatic light and superimposed on the conventional dc light and voltage biases is proposed to eliminate the artifacts in external quantum efficiency (EQE) measurements for multijunction solar cells. It is demonstrated experimentally that this method effectively eliminates the EQE measurement artifacts caused by the shunt effect,...
A pulsed voltage bias method is used to accurately measure the external quantum efficiency (EQE) of multi-junction solar cells by controlling the electrical and optical coupling between subcells.
The spontaneous emission efficiency (ηrad) of the subcells in a multi-junction solar cell under forward bias yields information about the subcell material quality. Electroluminesence measurement, calibrated with a technique that takes advantage of the luminescence coupling between subcells, is used to determine ηrad as a function of injection current. The InGaAs subcell's ηrad is also fitted to a...
A method for determining the luminescence coupling between subcells in a multi-junction solar cell is presented. The method measures the luminescent intensity for various optically and electrically generated currents. The luminescence coupling can then be derived straightforwardly by pairing the electrically biased and optically biased currents at a given output intensity.
The combined effects of shunt and luminescence coupling on the measurement artifacts of external quantum efficiency (EQE) are modeled and analyzed for the top, middle and bottom subcells of multi-junction solar cells. The measurement artifacts of a Ge bottom cell caused by the combined effects are explained with the models.
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