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A novel strain engineering technique for a fully silicided (FUSI) metal gate called contact etch stop layer (CESL)-enveloped FUSI was developed for the first time. A CESL was deposited prior to the FUSI RTP2 (the second rapid thermal process of FUSI gate formation) to confine the NixSi FUSI. Then, the phase transfer and volume change of the enveloped FUSI after RTP2 induced a tensile stress to enhance...
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