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Hydrogen silsesquioxane (HSQ) is an attractive electron‐beam (e‐beam) resist for sub‐20 nm lithography owing to its high resolution, excellent line‐edge roughness (LER) and good plasma etch resistance. However, the sensitivity and long‐term stability of HSQ need to be significantly improved to have HSQ resists adopted for volume manufacturing. Here we develop novel organosilicate e‐beam resists with...
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