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At 85degC under very low plusmn 8V and fast 100mus P/E, good memory device integrity of 2.5V initial DeltaVth and 1.45 V 10-year extrapolated retention are obtained. This was achieved in SiO 2/HfON/HfAlO/TaN MONOS using very high-kappa (~22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125degC
Using micro-crystallized high-k SrTiO3 on N+-treated TaN, very high 28 fF/mum2 capacitance density, low voltage linearity (alpha) of 92 ppm/V2 and small leakage of 3times10-8 A/cm2 at 2V are beyond ITRS spec of analog capacitor at year 2018. Further improving to 44 fF/mum2 and low alpha of 54 ppm/V2 are obtained for higher speed analog/RF ICs at 2 GHz
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