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Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga2O3(Gd2O3) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (Dit) of ~2times1011cm-2 eV-1, a low leakage current density (Jg) of ~10-9A/cm2, well-behaved capacitance-voltage (C-V) characteristics...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
Ultra-high vacuum (UHV)-deposited high Ga2O3(Gd2O3) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga2O3(Gd2O3)/Ge interface is revealed to be abrupt even being subjected to a 500degC anneal, a high kappa value of 14.5, a low leakage current density of ~10-9 A/cm2 with a Fowler-Nordheim tunneling behavior,...
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