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In this work, without employing any IPL, excellent electrical performances for the Ge MOS devices, i.e. MOSCAPs and MOSFETs, have been demonstrated using ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] directly on Ge (100) with the incorporation of fluorine. The GGO/Ge interface is atomically abrupt with negligible Ge inter-diffusion and highly thermodynamically stable withstanding high temperature...
In this work, for practical device integration in future, a self-aligned In0.53Ga0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In0.53Ga0.47As as the channel, ALD-AI2O3 as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after...
For the first time, inversion-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a gate dielectric have been successfully fabricated, showing well-behaved drain I-V and transfer characteristics. The drain current was scaled with gate length, showing a maximum drain current of 10 mA/mm in a device of 1 mum gate length, at a gate voltage (Vgs) of 8 V and a drain voltage (Vds) of 10 V. High...
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