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An overview is given on advances of science and devices of InGaAs, Ge, and GaN MOS capacitors and inversion-channel and depletion-mode MOSFET’s, with emphasis on the results using ultra-high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] and atomic layer deposited (ALD) oxides as high-k dielectrics. Very importantly, no interfacial layers are employed in these MOS devices. Low interfacial densities of...
Transmission electron microscopy structural characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy with a film thickness of ∼ 5 nm was conducted. The study indicates that the room-temperature as-grown films are amorphous and the films crystallize into the monoclinic phase upon in situ post annealing at 540 °C in the growth chamber. Both types of films show an atomically...
We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant because Al2O3 possesses highly desirable physical and electrical properties as a gate dielectric. These MOSFET devices exhibit extremely low gate-leakage current, high transconductance,...
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