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In this work, without employing any IPL, excellent electrical performances for the Ge MOS devices, i.e. MOSCAPs and MOSFETs, have been demonstrated using ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] directly on Ge (100) with the incorporation of fluorine. The GGO/Ge interface is atomically abrupt with negligible Ge inter-diffusion and highly thermodynamically stable withstanding high temperature...
We have achieved high device performance in self-aligned inversion-channel InGaAs MOSFETs, as well as a CET of <; 1 nm, a Dit ≤ 1011 eV-1cm-2, and high-temperature thermal stability withstanding >850°C RTA in GGO and a CET of <; 1 nm in ALD-HfO2 on InGaAs. Remarkable device performances in self-aligned, inversion-channel Ge MOSFET using GGO without any interfacial passivation layers (IPLs),...
High-performance self-aligned inversion-channel In0.75Ga0.25As n-MOSFETs using in-situ ultra-high-vacuum (UHV) deposited Al2O3/Ga2O3(Gd2O3) and ex-situ atomic-layer-deposited (ALD) Al2O3 as gate dielectrics have been fabricated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. A 1.2 mum-gate-length In0.75Ga0.25As MOSFET using Al2O3(2 nm-thick)/GGO(13...
Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga2O3(Gd2O3) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (Dit) of ~2times1011cm-2 eV-1, a low leakage current density (Jg) of ~10-9A/cm2, well-behaved capacitance-voltage (C-V) characteristics...
In this work, for practical device integration in future, a self-aligned In0.53Ga0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In0.53Ga0.47As as the channel, ALD-AI2O3 as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
Ultra-high vacuum (UHV)-deposited high Ga2O3(Gd2O3) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga2O3(Gd2O3)/Ge interface is revealed to be abrupt even being subjected to a 500degC anneal, a high kappa value of 14.5, a low leakage current density of ~10-9 A/cm2 with a Fowler-Nordheim tunneling behavior,...
For the first time, inversion-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a gate dielectric have been successfully fabricated, showing well-behaved drain I-V and transfer characteristics. The drain current was scaled with gate length, showing a maximum drain current of 10 mA/mm in a device of 1 mum gate length, at a gate voltage (Vgs) of 8 V and a drain voltage (Vds) of 10 V. High...
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non...
In this paper, inversion n-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a high k gate dielectric is demonstrated for the first time electrical performance close to those of the silicon based MOSFET. Device performance are markedly improved compared to the previous results of GaN MOSFETs with high k dielectrics.
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
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