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This paper presents the results of a practical experiment studying the behavior of InGaAs solar cells exposed to sunlight in outer space. The experiment was performed by a team of students and faculty as part of RockSat-C student project in June 2015.
Heterojunction emitter InAs/GaAs quantum dot solar cells (QDSC) with an In0.48Ga0.52P (InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip solar cells in order to enable sub-cell polarity compatibility of InAs/GaAs QDSCs with current state-of-the-art monolithic InGaP/GaAs/Ge triple junction solar cells for space applications and to investigate potential dark current...
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