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The impact of strain-engineering on the low frequency of n-channel tri-gate FinFETs fabricated on silicon on insulator (SOI) substrates noise is reported. The work is first focused on the study of nFinFETs with a standard structure and with strain-engineered channel structures, using either global or local straining techniques, or a combination of both. A carrier number fluctuation dominant flicker...
In partially depleted (PD) silicon-on-insulator (SOI) MOSFETs with thin gate oxides, a particular effect named linear kink effect (LKE) occurs, which is due to the fact that the body potential is strongly affected by majority carriers injected in the body by the electron valence-band (EVB) tunneling through the ultra-thin gate oxide. This unexpected phenomenon induces a second peak in the transconductance...
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