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In TANOS stuctures in retention, the major decrease in the programmed threshold voltage is found to be caused by the Vt sensing (IdVg measurements) rather than by intrinsic charge loss (when no bias is applied). This Vt decrease can be understood within the process of the temperature-activated charge transport through the Al2O3 blocking oxide. The charge loss can be minimized when Vt sensing time...
Tunnel oxide degradation in TANOS devices and its origins were investigated in terms of program, erase, and endurance device operation modes. It was found that the erase operation may cause significant tunnel oxide degradation, while the degradation due to program operation is negligible. In the erase and endurance modes, tunnel oxide degradation is primarily controlled by the process of electron...
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