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To demonstrate the contribution of Cooper pairs to radiative recombination in a semiconductor, a n-InGaAs/p-InP light emitting diode with superconducting Nb electrodes was fabricated. Electroluminescence as well as photoluminescence from the n-InGaAs into which electron Cooper pairs were expected to penetrate from the superconducting Nb electrodes by the proximity effect was drastically enhanced at...
Si-based trans-column semiconductor quantum dots (TCQDs) are created as a new class of Si-based self-assembling nanostructures in an attempt to realize an efficient Si-based light emitter with light amplifying characteristics. A high value of quantum efficiency has been obtained for EL at low temperature, and amplified spontaneous emission of interband radiative recombination has been observed under...
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