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We have investigated the effects of annealing temperature on the physical and electrical properties of the HfO 2 film deposited by an atomic layer deposition (ALD) method for high-k gate oxides in thin-film-transistors (TFTs). The ALD deposition of HfO 2 directly on the Si substrate at 300 °C results in the formation of thin HfSi x O y interfacial layer between Si and...
We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal–insulator–metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 °C, an annealing step using a rapid thermal processor (RTP) improves the...
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