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A compact STT (Spin-Transfer Torque)-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54 nm technology node. The basic switching performance (R-H and R-V) of the MTJs and current drivability of the access transistors were characterized at the single bit cell level. Through the direct access capability and normal chip operation in our STT-RAM test blocks, the switching behavior...
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