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We have developed a novel and cost-efficient silicide integration solution to achieve a hole barrier height of 215 meV and electron barrier height of 665 meV simultaneously with a single metallic silicide based on aluminum inter-diffusion. It is proposed that aluminum diffuses into PtSi and forms an alloy, which lowers the electron barrier height of PtSi due to a change in the intrinsic PtSi workfunction...
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