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For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal...
Self-heating in AlGaN/GaN high electron mobility transistors (HEMT) degrades device performance and reliability. Under nominal operating conditions, a so-called hot spot develops near the drain-side edge of the gate. The magnitude of the peak temperature at this local hot spot directly impacts device lifetime. Especially, such self-heating effects are aggravated in AlGaN/GaN HEMTs employing low cost...
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