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A method was developed to investigate the profiles of etched ion tracks in silicon dioxide membranes that are thermally grown on silicon (100) substrates. These membranes were irradiated with 9MeV Cu5+63, 45MeV Br9+80 or 76.5MeV Br16+80 ions. The induced latent ion tracks were then selectively over-etched in aqueous 4% HF till reaching the silicon substrates. We used both the top and bottom diameters...
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