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Broad area InGaAlP visible light laser diodes with antireflection and high-reflection coatings have been fabricated. High power CW operation above 300 mW was obtained at 2 degrees C heat-sink temperature. This value corresponded to a light power density of 2.7 MW/cm/sup 2/. The far field pattern showed a single lobe shape for output power up to 100 mW.<<ETX>>
The oscillation spectra and noise characteristics of AlGaInP lasers are shown to depend on the ridge structure. Relatively narrow current injection width and wide optical field are realised in a
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