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The thermo-elastic strain is induced by through silicon vias (TSV) due to the difference of thermal expansion coefficients between the copper (∼18 ppm/°C) and silicon (∼2.8 ppm/°C) when the structure is exposed to a thermal ramp budget in the three dimensional integrated circuit (3DIC) process. These thermal expansion stresses are highly enough to introduce the delamination on the interfaces between...
A novel ac transconductance method for oxide trap characterization is introduced, validated and demonstrated on two advanced FETs without a body contact, including Si Ultra-Thin-Body and BOX (UTBB) Fully Depleted (FD) SOI MOSFETs and InGaAs MOSFETs. The proposed method can extract the energy and spatial distributions of oxide traps in a variety of device structures, gate areas, and channel materials.
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
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