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In this letter, we show that conventional III–V MOSFETs with moderate/high In content channels (In0.53Ga0.47As or In0.70Ga0.30As) at scaled nodes are incompatible with mobile SoC designs, which often operate at intermediate/high ${V_{{\mathrm {dd}}}}$ (0.7 V to $\geq 1$ V) to achieve high frequency including during burst-mode. The incompatibility is due to conventional III–V FETs having too small...
The formation of poly(acrylic acid), PAA, -anchored polyelectrolyte multilayers on an optical fibre long period grating (LPG) by the layer-by-layer (LbL) assembly technique for highly sensitive ammonia gas detection is reported. PAA could act as a receptor for binding of amine compounds, especially ammonia, which would induce changes in the coating properties such as optical thickness (OT), film thickness/density...
SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis,...
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