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High-frequency characteristics of Lg = 60 nm In0.7Ga0.3As MOS-high-electron-mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic-layer-deposition is reported. Fabricated In0.7Ga0.3As MOS-HEMTs with Lg = 60 nm exhibit subthreshold-swing (SS) = 89 mV/dec., drain-induced-barrier-lowering = 98 mV/V, gm_max = 1.1 mS/μm, fT = 187 GHz and fmax = 202 GHz at VDS = 0.5 V. The high-frequency...
An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170 Ω-μm. A 40 nm gate length In0.7Ga0.3As HEMT with Lside=100 nm and tins=10 nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122 mV/V and S=80 mV/dec at VDS=0.5 V. In addition, this...
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