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We report a novel Ge waveguide photodetector and the fabrication on silicon-on-insulator (SOI) platform. Localized stressor structures were incorporated to tune the responsivity roll-off wavelength. With the localized stressor structure, the roll-off in responsivity is found to be red-shifted from 1520 nm to beyond 1620 nm, i.e., a flat responsivity over the entire C- and L-band is obtained. This...
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~dB for a wavelength range of 1580-1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated for the first time.
In this work, we have developed a Ge electro-efficient (EA) modulator whereby light is coupled evanescently from a crystalline silicon waveguide up into a Ge rib. A lateral electric field is employed in the Ge rib to enhance absorption via the Frank-Kedlysh effect which enables light modulation. The EA effect is most pronouced at wavelengths beyond 1580 nm due to a roll-off in absorption coefficient...
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