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This paper presents a study of the relaxation mechanisms for SiGe epitaxy performed by reduced pressure chemical vapor deposition (RPCVD) in a commercially available single wafer epitaxial reactor. The samples were grown at 500 o C and an overall pressure of 40 Torr, with SiH 2 Cl 2 and GeH 4 as precursor gasses. In contrast to the situation for molecular beam epitaxy...
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